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| SI2327DS New Product Vishay Siliconix P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -200 200 FEATURES ID (A) -0.49 -0.48 rDS(on) (W) 2.35 @ VGS = -10 V 2.45 @ VGS = -6.0 V Qg (Typ) 8.0 80 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size APPLICATIONS D Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: SI2327DS -T1--E3 Top View SI2327DS (D7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Single-Pluse Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 1 0 mH 1.0 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 5 sec Steady State -200 $20 Unit V -0.49 -0.39 -1.0 -1.0 4.0 0.8 1.25 0.8 -55 to 150 -0.38 -0.31 -0.6 mJ 0.75 0.48 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 73240 S-42448--Rev. A, 10-Jan-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W C/W 1 SI2327DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On Resistance Drain Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -200 V, VGS = 0 V VDS = -200 V, VGS = 0 V, TJ = 55_C VDS v -15 V, VGS = 10 V VGS = -10 V, ID = -0.5 A VGS = -6.0 V, ID = -0.5 A VDS = -15 V, ID = -0.5 A IS = -1.0 A, VGS = 0 V -1.0 1.9 1.96 1.8 0.85 -1.2 2.35 2.45 -200 -2.5 -4.5 "100 -1 -10 V nA mA A W S V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Rg Ciss Coss Crss VDS = -25 V, VGS = 0, f = 1 MHz VDS = -100 V, VGS = 10 V 100 V ID ^ -0.5 A f = 1.0 MHz 8.0 1.3 2.5 8.0 340 25 14 510 p pF W 12 nC Switchingc Turn-On Time td(on) tr td(off) tf Qrr IF = 0.5 A, di/dt = 100 A/ms VDD = -100 V, RL = 100 W ID ^ -1.0 A VGEN = -10 V -1 0 A, Rg = 6 W 8 11 16 11 140 12 17 25 17 200 nC ns Turn-Off Turn Off Time Body Diode Reverse Recovery Charge Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73240 S-42448--Rev. A, 10-Jan-05 SI2327DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 thru 5 V 1.0 Vishay Siliconix Transfer Characteristics 0.8 I D - Drain Current (A) 0.8 I D - Drain Current (A) 0.6 0.6 0.4 4V 0.4 TC = 125_C 0.2 25_C -55_C 4 5 0.2 0.0 0 2 4 6 8 10 0.0 0 1 2 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 3.2 2.8 r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 500 Capacitance C - Capacitance (pF) 2.4 VGS = 6 V 2.0 1.6 1.2 0.8 0.4 0.0 0.0 VGS = 10 V 400 Ciss 300 200 100 Crss Coss 0 0.2 0.4 0.6 0.8 1.0 0 30 60 90 120 150 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.5 A rDS(on) - On-Resiistance (Normalized) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -50 On-Resistance vs. Junction Temperature 8 VGS = 10 V ID = 0.5 A 6 4 2 0 0 1 2 3 4 5 6 7 8 Qg - Total Gate Charge (nC) Document Number: 73240 S-42448--Rev. A, 10-Jan-05 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI2327DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 TJ = 150_C r DS(on) - On-Resistance ( W ) 1 I S - Source Current (A) 6 5 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 On-Resistance vs. Gate-to-Source Voltage ID = 0.5 A 0.1 TJ = 25_C 0.01 0.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 ID = 250 mA 0.7 V GS(th) Variance (V) 12 10 Single Pulse Power 8 Power (W) 0.4 6 4 TA = 25_C -0.2 2 0.1 -0.5 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 10 Safe Operating Area IDM Limited 1 I D - Drain Current (A) *rDS(on) Limited 0.1 10 ms 100 ms 1 ms 10 ms 0.01 100 ms TA = 25_C Single Pulse BVDSS Limited 1 10 100 1000 10 s, 1 s dc, 100 s 0.001 0.1 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com Document Number: 73240 S-42448--Rev. A, 10-Jan-05 4 SI2327DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73240. Document Number: 73240 S-42448--Rev. A, 10-Jan-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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